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| 2SD1409 GENERAL DESCRIPTION SILICON NPN DARLINGTON TRANSISTOR Darington transistor are designed for use as general purpose amplifiers, switching and motor control applications. QUICK REFERENCE DATA SYMBOL TO-220F CONDITIONS VBE = 0V MIN VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time Tmb 25 IC = 4.0A; IB = 0.04A f=16KHZ IF=3A IC=4.0A,IB1=-IB2=0.04A,VCC=100V 2.5 MAX 600 400 6 12 25 2.0 5 6.0 UNIT V V A A W V A V s LIMITING VALUES SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0V Tmb 25 MIN -55 - MAX 600 400 6 12 1 2 25 150 150 UNIT V V A A A A W ELECTRICAL CHARACTERISTICS SYMBOL ICE ICES VCEOsust VCEsat VBEsat hFE VF fT Cc ts tf PARAMETER Collector cut-off current Collector-emitter sustaining voltage Collector-emitter saturation voltages Base-emitter satuation voltage DC current gain Diode forward voltage Transition frequency at f = 1MHz Collector capacitance at f = 1MHz Switching times(16KHz line deflecton circuit) Turn-off storage time Turn-off fall time CONDITIONS VEB=0V,VCE=VCESMmax VEB=0V,VCE=VCESMmax Tj=125 IB=0A,IC=100mA L=25mH IC = 4.0A; IB = 0.04A IC = 4.0A; IB = 0.04A IC = 2A; VCE = 5V IF=3A IC=2A,VCE=10V VCB = 50V IC=4.0A,IB1=-IB2=0.04A,VCC=100V IC=4.0A,IB1=-IB2=0.04A,V CC=100V MIN MAX 0.5 3.0 UNIT mA mA V 2.0 1.5 600 2.5 5 5.0 50 10 6.0 V V V MHz pF s s Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: wsccltd@hkstar.com |
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